دیتاشیت BVSS123LT1G
مشخصات دیتاشیت
| نام دیتاشیت |
BVSS123LT1G
|
| حجم فایل |
71.803
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات فنی
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi BVSS123LT1G
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
225mW
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Total Gate Charge (Qg@Vgs):
-
-
Drain Source Voltage (Vdss):
100V
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Input Capacitance (Ciss@Vds):
20pF@25V
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Continuous Drain Current (Id):
170mA
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Gate Threshold Voltage (Vgs(th)@Id):
2.8V@1mA
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Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
6Ω@100mA,10V
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Package:
SOT-23(TO-236)
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Cut Tape (CT)
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Part Status:
Active
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Diode Type:
Schottky
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Voltage - DC Reverse (Vr) (Max):
20V
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Current - Average Rectified (Io):
1A
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Voltage - Forward (Vf) (Max) @ If:
500mV @ 1A
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Speed:
Fast Recovery =< 500ns, > 200mA (Io)
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Current - Reverse Leakage @ Vr:
200µA @ 20V
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Capacitance @ Vr, F:
-
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Mounting Type:
Surface Mount
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Package / Case:
DO-214AC, SMA
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Supplier Device Package:
SMA (DO-214AC)
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Operating Temperature - Junction:
-65°C ~ 125°C
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Base Part Number:
SS12
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detail:
Diode Schottky 20V 1A Surface Mount SMA (DO-214AC)